BFP196WNH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

RF Bipolar Transistors

Collector- Emitter Voltage VCEO Max :

12 V

Configuration :

Single

Continuous Collector Current :

150 mA

DC Collector/Base Gain hfe Min :

70

Emitter- Base Voltage VEBO :

2 V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Operating Frequency :

7.5 GHz

Package / Case :

SOT-343-4

Packaging :

Cut Tape, Reel

Technology :

SI

Transistor Polarity :

NPN

Transistor Type :

Bipolar Wideband