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HN1A01FU-GR,LF

Description: Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp

DF2B5BSL,L3F

Toshiba

ESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962
DF2B7PCT,L3F

Toshiba

ESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
DF2B5PCT,L3F

Toshiba

ESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
DF2S5M5SL,L3F

Toshiba

ESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
DF2S6P2CTC,L3F

Toshiba

ESD Suppressors / TVS Diodes ESD protection diode 80A +/-30kV

MSR2N3501UB

Microchip Technology

Bipolar Transistors - BJT RH Small-Signal BJT
BC856B,215

Nexperia

Bipolar Transistors - BJT PNP GP 100MA 65V
BCM61B,215

Nexperia

Bipolar Transistors - BJT Trans GP BJT NPN 45V 0.1A 4pin(3+Tab)
PBSS4021PX,115

Nexperia

Bipolar Transistors - BJT Single PNP -20V -6.2A 600mW 105MHz
BC817K-25R

Nexperia

Bipolar Transistors - BJT TRANS BIPOLAR

Part	Manufacturer	Stock	Description
HN1A01F-GR(TE85L,F	Toshiba	5,852	Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A
HN1A01F-Y(TE85L,F)	Toshiba	1,697	Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A
HN1A01FE-GR,LF	Toshiba	0	Bipolar Transistors - BJT Bias Resistor Built-in transistor
HN1A01FE-GR,LXHF	Toshiba	0	Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)
HN1A01FE-Y,LF	Toshiba	4,395	Bipolar Transistors - BJT ES6 PLN
HN1A01FE-Y,LXHF	Toshiba	0	Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6)
HN1A01FU-Y,LF	Toshiba	3,152	Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1MHz
HN1A01FU-Y,LXHF	Toshiba	0	Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6)