TTD1409B,S4X

Manufacturer :

Toshiba

Product Category :

Bipolar Transistors - BJT

Collector- Base Voltage VCBO :

160 V

Collector- Emitter Voltage VCEO Max :

80 V

Collector-Emitter Saturation Voltage :

0.3 V

Configuration :

Single

Emitter- Base Voltage VEBO :

7 V

Gain Bandwidth Product fT :

150 MHz

Maximum DC Collector Current :

4 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Package / Case :

TO-126N-3

Packaging :

Tube

Series :

TTD1409B

Transistor Polarity :

NPN