- Manufacturer :
- Nexperia
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 50 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 150 mV
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 10 V
- Gain Bandwidth Product fT :
- 230 MHz
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- DFN1412-6
- Pd - Power Dissipation :
- 480 mW
- Qualification :
- AEC-Q101
- Transistor Polarity :
- NPN
- Datasheets
- PRMH11Z
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| PRMH10Z | Nexperia | 0 | Bipolar Transistors - BJT PRMH10/SOT1268 DFN1412-6 |
| PRMH13Z | Nexperia | 6 | Bipolar Transistors - BJT PRMH13/SOT1268 DFN1412-6 |
| PRMH2Z | Nexperia | 0 | Bipolar Transistors - BJT PRMH2/SOT1268 DFN1412-6 |
| PRMH9Z | Nexperia | 0 | Bipolar Transistors - BJT PRMH9/SOT1268 DFN1412-6 |
