- Manufacturer :
 - onsemi
 
- Product Category :
 - Bipolar Transistors - BJT
 
- Collector- Base Voltage VCBO :
 - 400 V
 
- Collector- Emitter Voltage VCEO Max :
 - 250 V
 
- Collector-Emitter Saturation Voltage :
 - 1.4 V
 
- Configuration :
 - Single
 
- Emitter- Base Voltage VEBO :
 - 5 V
 
- Gain Bandwidth Product fT :
 - 4 MHz
 
- Maximum DC Collector Current :
 - 16 A
 
- Maximum Operating Temperature :
 - + 150 C
 
- Minimum Operating Temperature :
 - - 65 C
 
- Mounting Style :
 - Through Hole
 
- Package / Case :
 - TO-3P-3
 
- Packaging :
 - Tube
 
- Pd - Power Dissipation :
 - 200 mW
 
- Series :
 - NJW21194
 
- Transistor Polarity :
 - NPN
 
- Datasheets
 - NJW21194G
 
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| Part | Manufacturer | Stock | Description | 
|---|---|---|---|
| NJW21193G | onsemi | 807 | Bipolar Transistors - BJT 200W PNP | 
| NJW2311V-TE1 | NJR (New Japan Radio) | 0 | Modulator / Demodulator High Precision C-MOS 3-Terminal Reg | 
 