- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 160 V
- Collector- Emitter Voltage VCEO Max :
- 160 V
- Collector-Emitter Saturation Voltage :
- 2 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 30 MHz
- Maximum DC Collector Current :
- 18 A
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- Through Hole
- Packaging :
- Tray
- Pd - Power Dissipation :
- 180 W
- Series :
- TTC0002
- Transistor Polarity :
- NPN
- Datasheets
- TTC0002(Q)
Manufacturer related products
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962 -
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
-
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TTC004B,Q | Toshiba | 10,656 | Bipolar Transistors - BJT NPN 2.5A 1.5W 280 HFE 0.5V Trans |
| TTC008(Q) | Toshiba | 103 | Bipolar Transistors - BJT NPN PWR Amp Trans 1.5A IC 3A 1.1W |
| TTC011B,Q | Toshiba | 2,290 | Bipolar Transistors - BJT PWR MOS TRANS PC=10W F=1MHZ |
| TTC012(Q) | Toshiba | 604 | Bipolar Transistors - BJT NPN PWR Amp Trans 2A IC 3A ICP 800V |
| TTC014,L1NV | Toshiba | 0 | Bipolar Transistors - BJT PWR MOS TRANS PC=40W NEW PW-MO |
| TTC015B,Q | Toshiba | 750 | Bipolar Transistors - BJT PWR TRANS TO-126N PC=10W F=1MH |
