FS660R08A6P2FBBPSA1

Manufacturer :

Infineon Technologies

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

750 V

Collector-Emitter Saturation Voltage :

1.1 V

Configuration :

6-Pack

Continuous Collector Current at 25 C :

450 A

Gate-Emitter Leakage Current :

400 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Packaging :

Tray

Pd - Power Dissipation :

1053 W

Product :

IGBT Silicon Modules