NXH100B120H3Q0STG

Manufacturer :

onsemi

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

1.77 V

Configuration :

Dual

Continuous Collector Current at 25 C :

50 A

Gate-Emitter Leakage Current :

800 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Package / Case :

Q0BOOST

Packaging :

Tray

Pd - Power Dissipation :

186 W

Product :

IGBT Silicon Carbide Modules