IXA60IF1200NA

Manufacturer :

IXYS

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

1.8 V

Configuration :

Single

Continuous Collector Current at 25 C :

88 A

Gate-Emitter Leakage Current :

500 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Package / Case :

SOT-227B-4

Packaging :

Tube

Pd - Power Dissipation :

290 W

Product :

IGBT Silicon Modules