FF100R12RT4
- Mfr.Part #
- FF100R12RT4
- Manufacturer
- Infineon Technologies
- Package/Case
- -
- Datasheet
- Download
- Description
- IGBT Modules IGBT Module w/ IGBT & Diode
Request A Quote(RFQ)
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- Infineon Technologies
- Product Category :
- IGBT Modules
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 2 V
- Gate-Emitter Leakage Current :
- 100 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Packaging :
- Tray
- Pd - Power Dissipation :
- 555 W
- Product :
- IGBT Silicon Modules
- Datasheets
- FF100R12RT4
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FF1000R17IE4 | Infineon Technologies | 13 | IGBT Modules N-CH 1.7KV 1.39KA |
| FF1000R17IE4DP_B2 | Infineon Technologies | 0 | IGBT Modules PP IHM I XHP 1 7KV |
| FF1000R17IE4D_B2 | Infineon Technologies | 2 | IGBT Modules IGBT 1700V 1000A |
| FF1000R17IE4P | Infineon Technologies | 0 | IGBT Modules PP IHM I XHP 1 7KV |
| FF100R12KS4 | Infineon Technologies | 1 | IGBT Modules 1200V 100A DUAL |
