FF650R17IE4

Manufacturer :

Infineon Technologies

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1700 V

Collector-Emitter Saturation Voltage :

2.45 V

Configuration :

Dual

Continuous Collector Current at 25 C :

930 A

Gate-Emitter Leakage Current :

400 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Package / Case :

PRIME2

Packaging :

Tray

Pd - Power Dissipation :

4.15 kW

Product :

IGBT Silicon Modules