DF160R12W2H3F_B11

Manufacturer :

Infineon Technologies

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

1.55 V

Configuration :

Quad

Continuous Collector Current at 25 C :

20 A

Gate-Emitter Leakage Current :

100 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Package / Case :

Module

Packaging :

Tray

Pd - Power Dissipation :

20 mW

Product :

IGBT Silicon Carbide Modules