MSCGLQ50H120CTBL2NG

Manufacturer :

Microchip Technology

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1.2 kV

Collector-Emitter Saturation Voltage :

2.4 V

Configuration :

Full Bridge

Continuous Collector Current at 25 C :

110 A

Gate-Emitter Leakage Current :

150 nA

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Pd - Power Dissipation :

375 W

Product :

IGBT Silicon Modules