IXA70R1200NA

Manufacturer :

IXYS

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1.2 kV

Collector-Emitter Saturation Voltage :

1.8 V

Configuration :

Single

Continuous Collector Current at 25 C :

100 A

Gate-Emitter Leakage Current :

500 nA

Maximum Operating Temperature :

+ 125 C

Minimum Operating Temperature :

- 40 C

Package / Case :

SOT-227B-4

Packaging :

Tube

Pd - Power Dissipation :

350 W

Product :

IGBT Silicon Modules