DF150R12RT4

Manufacturer :

Infineon Technologies

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

2.15 V

Continuous Collector Current at 25 C :

150 A

Gate-Emitter Leakage Current :

100 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Packaging :

Tray

Pd - Power Dissipation :

790 W

Product :

IGBT Silicon Modules