BSM10GD120DN2E3224

Manufacturer :

Infineon Technologies

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

2.7 V

Configuration :

Hex

Continuous Collector Current at 25 C :

15 A

Gate-Emitter Leakage Current :

120 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Package / Case :

EconoPACK 2

Packaging :

Tray

Pd - Power Dissipation :

80 W

Product :

IGBT Silicon Modules