APTGFQ25H120T2G

Manufacturer :

Microchip Technology

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1.2 kV

Collector-Emitter Saturation Voltage :

2.1 V

Configuration :

Quad

Continuous Collector Current at 25 C :

40 A

Gate-Emitter Leakage Current :

150 nA

Maximum Operating Temperature :

+ 100 C

Minimum Operating Temperature :

- 40 C

Package / Case :

SP2

Pd - Power Dissipation :

227 W

Product :

IGBT Silicon Modules