HGT1S10N120BNST

Manufacturer :

onsemi / Fairchild

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

2.7 V

Configuration :

Single

Continuous Collector Current at 25 C :

35 A

Maximum Gate Emitter Voltage :

20 V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Package / Case :

TO-263AB-3

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

298 W

Series :

HGT1S10N120BNS

Technology :

SI