- Manufacturer :
- IXYS
- Product Category :
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max :
- 1.7 kV
- Collector-Emitter Saturation Voltage :
- 2.5 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 160 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-227B-4
- Packaging :
- Tube
- Pd - Power Dissipation :
- 735 W
- Series :
- IXGN100N170
- Technology :
- SI
- Datasheets
- IXGN100N170
Manufacturer related products
Catalog related products
-
-
-
ROHM SemiconductorIGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Field Stop Trench IGBT
-
ROHM SemiconductorIGBT Transistors 10us Short-Circuit Tolerance, 1200V 15A, Automotive Field Stop Trench IGBT
-
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| IXGN100N120 | IXYS | 0 | IGBT Transistors G-series |
| IXGN100N160A | IXYS | 0 | IGBT Transistors 100 Amps 1600V |
| IXGN200N170 | IXYS | 112 | IGBT Transistors IGBT NPT-HIVOLTAGE (MINI |
| IXGN200N60B3 | IXYS | 199 | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A |
| IXGN320N60A3 | IXYS | 190 | IGBT Transistors 320 Amps 600V |
| IXGN400N60A3 | IXYS | 87 | IGBT Transistors 400 Amps 600V |
| IXGN400N60B3 | IXYS | 81 | IGBT Modules Mid-Frequency Range PT IGBTs |
| IXGN50N120C3H1 | IXYS | 0 | IGBT Modules High Frequency Range >40khz CIGBT w/Diode |
| IXGN72N60C3H1 | IXYS | 1 | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A |
