IXDR30N120D1

Manufacturer :

IXYS

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

1.2 kV

Collector-Emitter Saturation Voltage :

2.4 V

Configuration :

Single

Continuous Collector Current at 25 C :

50 A

Maximum Gate Emitter Voltage :

20 V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Package / Case :

ISOPLUS247-3

Packaging :

Tube

Pd - Power Dissipation :

200 W

Series :

IXDR30N120

Technology :

SI