APT50GS60BRDQ2G

Manufacturer :

Microsemi / Microchip

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

600 V

Collector-Emitter Saturation Voltage :

2.8 V

Configuration :

Single

Continuous Collector Current at 25 C :

93 A

Maximum Gate Emitter Voltage :

30 V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Package / Case :

TO-247-3

Packaging :

Tube

Pd - Power Dissipation :

415 W

Technology :

SI