AFGB40T65SQDN

Manufacturer :

onsemi

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

650 V

Collector-Emitter Saturation Voltage :

1.6 V

Configuration :

Single

Continuous Collector Current at 25 C :

80 A

Maximum Gate Emitter Voltage :

20 V

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Package / Case :

TO-263-3

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

238 W

Qualification :

AEC-Q101

Technology :

SI