- Manufacturer :
- onsemi
- Product Category :
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.6 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 120 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 333 W
- Technology :
- SI
- Datasheets
- FGH60T65SQD-F155
Manufacturer related products
Catalog related products
-
-
-
ROHM SemiconductorIGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Field Stop Trench IGBT
-
ROHM SemiconductorIGBT Transistors 10us Short-Circuit Tolerance, 1200V 15A, Automotive Field Stop Trench IGBT
-
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FGH60N60SFDTU | onsemi / Fairchild | 838 | IGBT Transistors N-Ch/ 60A 600V FS |
| FGH60N60SMD | onsemi / Fairchild | 8,100 | IGBT Transistors 600V/60A Field Stop IGBT ver. 2 |
| FGH60N60UFDTU | onsemi / Fairchild | 720 | IGBT Transistors N-Ch/ 60A 600V FS |
| FGH60T65SHD-F155 | onsemi / Fairchild | 600 | IGBT Transistors FS3TIGBT TO247 60A 650V |
