IXA45IF1200HB

Manufacturer :

IXYS

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

1.8 V

Configuration :

Single

Continuous Collector Current at 25 C :

78 A

Maximum Gate Emitter Voltage :

20 V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Package / Case :

TO-247-3

Packaging :

Tube

Pd - Power Dissipation :

325 W

Series :

IXA45IF1200HB

Technology :

SI