IXXR110N65B4H1

Manufacturer :

IXYS

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

650 V

Collector-Emitter Saturation Voltage :

1.75 V

Configuration :

Single

Continuous Collector Current at 25 C :

150 A

Maximum Gate Emitter Voltage :

20 V

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Package / Case :

ISOPLUS 247-3

Packaging :

Tube

Pd - Power Dissipation :

455 W

Series :

Trench - 650V - 1200V GenX32

Technology :

SI