IXA55I1200HJ

Manufacturer :

IXYS

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

1.8 V

Configuration :

Single

Continuous Collector Current at 25 C :

84 A

Maximum Gate Emitter Voltage :

20 V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Package / Case :

ISOPLUS 247-3

Packaging :

Tube

Pd - Power Dissipation :

290 W

Series :

IXA55I1200HJ

Technology :

SI