IXYB82N120C3H1

Manufacturer :

IXYS

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

2.75 V

Configuration :

Single

Continuous Collector Current at 25 C :

164 A

Maximum Gate Emitter Voltage :

30 V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Package / Case :

TO-264-3

Packaging :

Tube

Pd - Power Dissipation :

1040 W

Series :

IXYB82N120

Technology :

SI