IRG7PH35UDPBF

Manufacturer :

Infineon Technologies

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

1.2 kV

Collector-Emitter Saturation Voltage :

1.9 V

Configuration :

Single

Continuous Collector Current at 25 C :

50 A

Maximum Gate Emitter Voltage :

30 V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Package / Case :

TO-247-3

Packaging :

Tube

Pd - Power Dissipation :

180 W

Series :

Rectifier Diode Module

Technology :

SI