IXYT30N65C3H1HV

Manufacturer :

IXYS

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

650 V

Collector-Emitter Saturation Voltage :

2.35 V

Configuration :

Single

Continuous Collector Current at 25 C :

60 A

Maximum Gate Emitter Voltage :

30 V

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Package / Case :

TO-268HV-2

Packaging :

Tube

Pd - Power Dissipation :

270 W

Series :

IXYT30N65C3

Technology :

SI