NGTG12N60TF1G

Manufacturer :

onsemi

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

600 V

Collector-Emitter Saturation Voltage :

1.6 V

Continuous Collector Current at 25 C :

24 A

Maximum Gate Emitter Voltage :

20 V

Mounting Style :

Through Hole

Package / Case :

TO-3PF-3L

Packaging :

Tube

Pd - Power Dissipation :

54 W

Series :

NGTG12N60TF1G

Technology :

SI