RGW50TS65GC11

Manufacturer :

ROHM Semiconductor

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

650 V

Collector-Emitter Saturation Voltage :

1.9 V

Configuration :

Single

Continuous Collector Current at 25 C :

50 A

Maximum Gate Emitter Voltage :

30 V

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

Through Hole

Package / Case :

TO-247N-3

Packaging :

Tube

Pd - Power Dissipation :

156 W

Technology :

SI