IGW25N120H3XK

Manufacturer :

Infineon Technologies

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

2.05 V

Configuration :

Single

Continuous Collector Current at 25 C :

50 A

Maximum Gate Emitter Voltage :

20 V

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

Through Hole

Package / Case :

TO-247-3

Packaging :

Tube

Pd - Power Dissipation :

326 W

Series :

HighSpeed 3

Technology :

SI