IXBN75N170A

Manufacturer :

IXYS

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

1.7 kV

Collector-Emitter Saturation Voltage :

4.95 V

Configuration :

Single

Continuous Collector Current at 25 C :

75 A

Maximum Gate Emitter Voltage :

20 V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Package / Case :

SOT-227B-4

Packaging :

Tube

Pd - Power Dissipation :

625 W

Series :

IXBN75N170

Technology :

SI