GAN041-650WSBQ

Manufacturer :

Nexperia

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

47.2 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

SOT-429-3

Packaging :

Cut Tape, Reel

Pd - Power Dissipation :

187 W

Qg - Gate Charge :

22 nC

Rds On - Drain-Source Resistance :

41 mOhms

Technology :

GaN

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

650 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

4.5 V