TK2R4E08QM,S1X

Manufacturer :

Toshiba

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

120 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

-

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

TO-220AB-3

Packaging :

Tube

Pd - Power Dissipation :

300 W

Qg - Gate Charge :

178 nC

Rds On - Drain-Source Resistance :

2.44 mOhms

Technology :

SI

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

80 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

3.5 V