TK70J20D,S1Q

Mfr.Part #
TK70J20D,S1Q
Manufacturer
Toshiba
Package/Case
TO-3PN-3
Datasheet
Download
Description
MOSFET N-Ch 200V 70A 410W MOSVII 160nC .0029

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Toshiba
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
70 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-3PN-3
Pd - Power Dissipation :
410 W
Qg - Gate Charge :
160 nC
Rds On - Drain-Source Resistance :
27 mOhms
Technology :
SI
Tradename :
MOSVII
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
200 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
3.5 V
Datasheets
TK70J20D,S1Q

Manufacturer related products

  • Toshiba
    ESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962
  • Toshiba
    ESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
  • Toshiba
    ESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
  • Toshiba
    ESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
  • Toshiba
    ESD Suppressors / TVS Diodes ESD protection diode 80A +/-30kV

Catalog related products

Related products