IGT60R190D1SATMA1

Manufacturer :

Infineon Technologies

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

12.5 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

HSOF-8

Packaging :

Cut Tape, Reel

Pd - Power Dissipation :

55.5 W

Qg - Gate Charge :

3.2 nC

Rds On - Drain-Source Resistance :

190 mOhms

Technology :

GaN

Tradename :

CoolGaN

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

600 V

Vgs - Gate-Source Voltage :

- 10 V, + 10 V

Vgs th - Gate-Source Threshold Voltage :

900 mV