HP8M51TB1

Manufacturer :

ROHM Semiconductor

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

4.5 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

2 Channel

Package / Case :

HSOP-8

Packaging :

Cut Tape, Reel

Pd - Power Dissipation :

7 W

Qg - Gate Charge :

15 nC, 26.2 nC

Rds On - Drain-Source Resistance :

170 mOhms, 290 mOhms

Technology :

SI

Transistor Polarity :

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage :

100 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

1 V