US6J12TCR

Manufacturer :

ROHM Semiconductor

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

2 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

2 Channel

Package / Case :

SOT-363-6

Packaging :

Cut Tape, Reel

Pd - Power Dissipation :

1 W

Qg - Gate Charge :

7.6 nC

Rds On - Drain-Source Resistance :

105 mOhms

Technology :

SI

Transistor Polarity :

P-Channel

Vds - Drain-Source Breakdown Voltage :

12 V

Vgs - Gate-Source Voltage :

- 8 V, + 8 V

Vgs th - Gate-Source Threshold Voltage :

300 mV