FQP8P10
- Mfr.Part #
- FQP8P10
- Manufacturer
- onsemi / Fairchild
- Package/Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET 100V P-Channel QFET
Request A Quote(RFQ)
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- onsemi / Fairchild
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 8 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 65 W
- Qg - Gate Charge :
- 15 nC
- Rds On - Drain-Source Resistance :
- 530 mOhms
- Technology :
- SI
- Tradename :
- QFET
- Transistor Polarity :
- P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 100 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 4 V
- Datasheets
- FQP8P10
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FQP85N06 | onsemi / Fairchild | 1,453 | MOSFET 60V N-Channel QFET |
| FQP8N60C | onsemi / Fairchild | 40 | MOSFET 600V N-Ch Q-FET advance C-Series |
| FQP8N80C | onsemi / Fairchild | 4,000 | MOSFET 800V N-Ch Q-FET advance C-Series |
| FQP8N90C | onsemi / Fairchild | 1,950 | MOSFET 900V N-Ch Q-FET advance C-Series |
