G3R160MT17J

Mfr.Part #
G3R160MT17J
Manufacturer
GeneSiC Semiconductor
Package/Case
TO-263-7
Datasheet
Download
Description
MOSFET 1700V 160mO TO-263-7 G3R SiC MOSFET

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
GeneSiC Semiconductor
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
18 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-263-7
Packaging :
Tube
Pd - Power Dissipation :
145 W
Qg - Gate Charge :
29 nC
Rds On - Drain-Source Resistance :
160 mOhms
Technology :
SiC
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
1.7 kV
Vgs - Gate-Source Voltage :
- 5 V, + 15 V
Vgs th - Gate-Source Threshold Voltage :
2.7 V
Datasheets
G3R160MT17J

Manufacturer related products

  • GeneSiC Semiconductor
    SCR Modules 6500V - 40A SiC Discrete Thyrstr
  • GeneSiC Semiconductor
    SCR Modules 6500V 40A SiC Thyristor
  • GeneSiC Semiconductor
    SCR Modules 6500V 60A SiC Thyristor
  • GeneSiC Semiconductor
    SCR Modules 6500V - 80A SiC Discrete Thyrstr
  • GeneSiC Semiconductor
    Discrete Semiconductor Modules 1700V 100A SOT-227 SiC Schottky MPS

Catalog related products

Related products

Part Manufacturer Stock Description
G3R160MT12D GeneSiC Semiconductor 1,800 MOSFET 1200V 160mO TO-247-3 G3R SiC MOSFET
G3R160MT12J GeneSiC Semiconductor 17 MOSFET 1200V 160mO TO-263-7 G3R SiC MOSFET
G3R160MT17D GeneSiC Semiconductor 1,200 MOSFET 1700V 160mO TO-247-3 G3R SiC MOSFET