- Manufacturer :
- Toshiba
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 8 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- -
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- DPAK-3
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 27 W
- Qg - Gate Charge :
- 19 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 104 mOhms
- Technology :
- SI
- Transistor Polarity :
- P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 60 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 10 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
- Datasheets
- TJ8S06M3L,LXHQ
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Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TJ8S06M3L(T6L1,NQ) | Toshiba | 3 | MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104 |
