IPB320N20N3GATMA1

Mfr.Part #
IPB320N20N3GATMA1
Manufacturer
Infineon Technologies
Package/Case
TO-263-3
Datasheet
Download
Description
MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Infineon Technologies
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
34 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-263-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
136 W
Qg - Gate Charge :
29 nC
Rds On - Drain-Source Resistance :
28 mOhms
Technology :
SI
Tradename :
OptiMOS
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
200 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2 V
Datasheets
IPB320N20N3GATMA1

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
IPB320N20N3 G Infineon Technologies 5 MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
IPB35N10S3L-26 Infineon Technologies 1,000 MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
IPB35N10S3L26ATMA1 Infineon Technologies 2,953 MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T