G2R120MT33J

Manufacturer :

GeneSiC Semiconductor

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

34 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

TO-263-7

Packaging :

Tube

Pd - Power Dissipation :

366 W

Qg - Gate Charge :

130 nC

Rds On - Drain-Source Resistance :

120 mOhms

Technology :

SiC

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

3.3 kV

Vgs - Gate-Source Voltage :

- 5 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

4.5 V