- Manufacturer :
- IXYS
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 3 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 125 W
- Qg - Gate Charge :
- 67 nC
- Rds On - Drain-Source Resistance :
- 3.85 Ohms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 1.5 kV
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.5 V
- Datasheets
- IXTJ6N150
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| IXTJ4N150 | IXYS | 30 | MOSFET High Voltage Power MOSFET |
