RQ3G110ATTB

Manufacturer :

ROHM Semiconductor

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

35 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

HSMT-8

Packaging :

Cut Tape, Reel

Pd - Power Dissipation :

20 W

Qg - Gate Charge :

46 nC

Rds On - Drain-Source Resistance :

12.4 mOhms

Technology :

SI

Transistor Polarity :

P-Channel

Vds - Drain-Source Breakdown Voltage :

40 V

Vgs - Gate-Source Voltage :

20 V

Vgs th - Gate-Source Threshold Voltage :

2.5 V