HS8MA2TCR1

Manufacturer :

ROHM Semiconductor

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

5.5 A, 7 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

2 Channel

Package / Case :

HSML3333L-9

Packaging :

Cut Tape, Reel

Pd - Power Dissipation :

4 W

Qg - Gate Charge :

7.8 nC, 8.4 nC

Rds On - Drain-Source Resistance :

35 mOhms, 80 mOhms

Technology :

SI

Transistor Polarity :

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage :

- 30 V, 30 V

Vgs - Gate-Source Voltage :

20 V

Vgs th - Gate-Source Threshold Voltage :

- 2.5 V, 2.5 V