RV4C020ZPHZGTCR1

Mfr.Part #
RV4C020ZPHZGTCR1
Manufacturer
ROHM Semiconductor
Package/Case
DFN1616-6W
Datasheet
Download
Description
MOSFET AECQ

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Manufacturer :
ROHM Semiconductor
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
2 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
DFN1616-6W
Packaging :
Cut Tape, Reel
Pd - Power Dissipation :
1.5 W
Qg - Gate Charge :
2 NC
Qualification :
AEC-Q101
Rds On - Drain-Source Resistance :
260 mOhms
Technology :
SI
Transistor Polarity :
P-Channel
Vds - Drain-Source Breakdown Voltage :
20 V
Vgs - Gate-Source Voltage :
8 V
Vgs th - Gate-Source Threshold Voltage :
1.3 V
Datasheets
RV4C020ZPHZGTCR1

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