- Manufacturer :
- IXYS
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 8 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-252-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 150 W
- Qg - Gate Charge :
- 11 nC
- Rds On - Drain-Source Resistance :
- 450 mOhms
- Technology :
- SI
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
- Datasheets
- IXFY8N65X2
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| IXFY26N30X3 | IXYS | 175 | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 |
| IXFY30N25X3 | IXYS | 202 | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 |
| IXFY36N20X3 | IXYS | 300 | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 |
| IXFY4N60P3 | IXYS | 0 | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode |
| IXFY4N85X | IXYS | 0 | MOSFET MSFT N-CH ULTRA JNCT X3&44 |
| IXFY5N50P3 | IXYS | 0 | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode |
