- Manufacturer :
- Toshiba
- Product Category :
- MOSFET
- Id - Continuous Drain Current :
- 60 A
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 150 W
- Rds On - Drain-Source Resistance :
- 8.5 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 80 V
- Datasheets
- TK60E08K3,S1X(S
Manufacturer related products
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962 -
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
-
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TK60F10N1L,LXGQ | Toshiba | 975 | MOSFET PD=205W F=1MHZ AEC-Q101 |
| TK60S06K3L(T6L1,NQ | Toshiba | 2,000 | MOSFET N-Ch MOS 60A 60V 88W 2900pF 0.008 |
| TK60S10N1L,LXHQ | Toshiba | 1,014 | MOSFET PD=180W F=1MHZ AEC-Q101 |
